发明名称 METHOD FOR DEVELOPING SIMULATION
摘要 PURPOSE:To enable to precisely form the surface of resist after developing by a method wherein the vector of developing is selectively increased on the necessary places only, or the developing vector on the unnecessary places is eliminated. CONSTITUTION:In the region surrounded by a boundary 1, a numerical operation is performed with a plurality of points, contained in the line 2 located on the initial surface of resist, as the starting point, and the locus 3 of the developing vector till the finishing time of developing is obtained. When the intervals between the tips of the adjoining developing vector is calculated, the intervals at two places are widened. At this point, the smallest integral number N4, which is not smaller than the quotient obtained by dividing the tip interval of the developing vector by the reference value, is calculated and the point at which the part between said two vectors will be divided into N4 sections is calculated. A numerical operation is performed with these points as new starting point, and the locus 4 of the new developing vector is calculated. By repeatingly performing the above-mentioned procedures on the entire initial surface of the resist, the number of developing vector can be suppressed to the minimum, thereby enabling to reduce the time necessary for numerical operation to the minimum.
申请公布号 JPS6158234(A) 申请公布日期 1986.03.25
申请号 JP19840178318 申请日期 1984.08.29
申请人 HITACHI LTD 发明人 MATSUZAWA TOSHIHARU;UMETANI YUKIO;SUNAMI HIDEO
分类号 H01L21/30;G03F7/00;G03F7/30;H01L21/027 主分类号 H01L21/30
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