| 摘要 |
PURPOSE:To obtain a thin type semiconductor device at low cost by a method wherein a sapphire substrate, on which a semiconductor element is formed through the intermediary of a protective film, is mounted on an insulated substrate, and after an electrode wire provided on an element is connected to the wire pattern on the insulated substrate, the circumference of the sapphire substrate is sealed by a resin layer which is thinner than the substrate. CONSTITUTION:A semiconductor chip 11, consisting of transparent sapphire whereon a semiconductor element is formed through the intermidiary of a protective film 12, mounted on an insulate substrate 14 consisting of polyimide and the like. Then, an Ni- and Au-plated Al electrode 13, which is exposed on the lower surface of the chip 11, is soldered on the wire pattern 15 which is provided on the insulated substrate 14. A frame 16, to be used to prevent the flow of resin, is provided on a pattern 15 surrounding the chip 11, and the sealing resin 17 such as epoxy and the like which is thinner than the chip 11 is poured into the gap located between the frame 16 and the chip 11. Through these procedures, a thin type semiconductor device is obtained at low cost. |
