| 摘要 |
PURPOSE:To prevent the part around electrode 3 from swelling up by a method wherein an electrode layer to be the first electrode is formed on a substrate through the intermediary of an oxide film and after isotropically etching the electrode utilizing specific pattern to retract it from the end of mask, the surface of electrode is oxidized to be coated with the second electrode. CONSTITUTION:An Si substrate 101 is coated with a gate oxide film 102 wherein a polycrystalline Si electrode layer 103 is deposited while a resist mask 104 with specified shape is provided to etch the electrode layer 103 utilizing the mask 104 leaving the layer 113 only below the mask 104. Next the end of layer 113 is isotropically etched utilizing the mask 104 as it is to be formed into a specified dimension of the first electrode 3. Later the mask 104 is removed to oxide the exposed part of electrode 3 so that the oxide film formed on the side may combine with a film 12 slightly thined by preceding etching process. Finally the overall surface of electrode 3 and the film 12 is coated with the second electrode layer 5. Through these procedure, any withstand voltage may be prevented from deteriorating due to electric field concentration. |
