| 摘要 |
PURPOSE:To enable the attainment of increase in integration by a method wherein a diffused layer of the same conductivity type as that of a substrate is provided around a diffused layer of reverse conductivity type to that of the substrate which constitutes a capacitor, so as to prevent the leakage of accumulated charges even with a narrower gap than conventional between capacitors. CONSTITUTION:N<+> type diffused layers 19 are formed in the substrate 11 facing to grooves where capacitors are formed; further, P<-> type diffused layers 17 are formed in the substrate 11 around the N<+> type diffused layers 19. Thereby, the leakage of accumulated charges to adjacent cell capacitors can be prevented because two capacitors are cut off by the P<-> type inversion preventing layers 17; therefore, it is no problem that the interval between the grooves where the capacitors are formed becomes as large as conventional. Accordingly, memory cells can be increased in integration, and the increase in capacitance of the dynamic memory can be attained. |
