发明名称 DIRECT CURRENT MAGNETRON SPUTTERING METHOD
摘要 An improved method of sputtering a platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor, whereby porous high surface area films are consistently deposited at high rates of deposition. A DC magnetron cathode assembly having a magnetic field strength of at least 500 gauss across its target face is used at a sputtering power of 4 - 9 kilowatts. In a preferred embodiment of the invention, a thimble-target spacing of less than 3.0 cm, a pressure less than 1.33 Pascals (10 millitorr), a sputtering atmosphere consisting essentially of more than 50 percent nitrogen and/or oxygen, an electrically isolated deposition surface, and an electrically floating reference electrode precoated on the zirconia thimble surface, are used.
申请公布号 JPS6156960(A) 申请公布日期 1986.03.22
申请号 JP19850140635 申请日期 1985.06.28
申请人 GENERAL MOTORS CORP 发明人 HAWAADO DEII KISUNAA
分类号 C23C14/36;C23C14/35;G01N27/407;G01N27/409;H01J37/34 主分类号 C23C14/36
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