| 摘要 |
PURPOSE:To obtain a photomask whose surface if flat by forming a pattern of a photoresist on a glass substrate, using its as a mask, and executing etching. CONSTITUTION:A resist pattern 12 is formed on a glass substrate 11. Subsequently, the substrate 11 is etched to a desired depth by using the resist pattern 12 as a mask, and thereafter, the resist pattern 12 is removed. Also, a light shielding material film 13 is formed on the substrate 11 so as to be thicker than the step difference of the substrate 11, and subsequently, a flat surface is formed by polishing the film 13. In the end, when the film 13 is etched to the extent that the upper part of the step difference of the substrate 11 is exposed, a photomask is prepared. In this way, there is no step difference between the surface of the substrate 11 and the surface of the film 13, and even in case of contact exposure, the photoresist on the semiconductor substrate is not damaged. |
