| 摘要 |
PURPOSE:To improve the sensitivity of photo detection by monolithic integration of MSM diodes and a FET and by obtaining a high-sensitivity gain by a method wherein the buffer layer of the FET is used as the operating layer of the MSM diodes. CONSTITUTION:The buffer layer 12 is formed on a substrate 11, and an active layer 14 is formed at a partial region of the buffer layer 12; then, gate, source, and drain electrodes 15-17 are provided on the active layer 14. Besides, diode electrodes 13 are provided on the region except said partial region of the buffer layer 12. For example, the MSM diodes 13 are formed on the buffer layer 12 after formation of this layer 12 on the GaAs substrate 11 without directly forming the MSM diodes on the GaAs substrate 11; further, the FET is formed on the active layer 14 which has been formed on the buffer layer 12, and the source electrode 15, gate electrode 16, and drain electrode 17 are provided. |
