| 摘要 |
PURPOSE:To enable accurate measurement of pressure difference under high static pressure by a method wherein a pressure-sensitive semiconductor chip is provided with one or more of additional recesses besides a recess that constitutes the diaphragm part for pressure-difference detection, and additional diffused resistance layers for static-pressure detection are formed on the diaphragm surfaces on the additioonal recesses. CONSTITUTION:A pressure P1 is applied on the upper surface of the pressure- sensitive semiconductor chip 1, and at the same time the presure difference (P1-P2) between P1 and P2 is detected as the change in resistance value of the diffused resistance layers 1c in terms of the displacement of the diaphragm part 1b by introducing a pressure P2 into the recess 1a under this part 1b via a pressure introduction tube 4. On the other hand, the value of the static pressure P1 is detected as the change in resistance value of the diffused resistance value 1e in terms of the displacement of the chip part on an additional recess 1d, and the difference in static pressure is thus corrected on the relation between the detected value of static pressure and the difference in static pressure in an electric circuit manner. |
