| 摘要 |
PURPOSE:To single-crystal a polycrystalline silicon film on an insulating film, by empolying ion beams with a spot or line shape. CONSTITUTION:After a polycrystalline silicon layer 4 is formed, ion beams 5 of compound are implanted into the layer 4 in an opening 3. As a result, the layer 4 is made locally single crystal 45 using the semiconductor substrate 1 as seed crystal. Next, by moving the ion beams 5 toward the polycrystalline film region in the direction 6, a single crystalline silicon layer 45 is formed. The scanning speed of the ion beams in the direction 6 is comparatively slow on account of making the polycrystalline silicon layer 4 amorphous sufficiently, and is preferably about 1mm./sec. |
