| 摘要 |
A sense amplifier circuit used in, for example, a MIS static RAM includes a differential amplifier (Q11 through Q14) for sensing and amplifying the difference in potential between two input lines (DB and &upbar& D) and generating two bipolar differential signals (D and &upbar& D) and a pull-down circuit (Q15) for establishing a reference potential (VREF) for the differential amplifier. A compensation circuit (Q16, Q17 and Q18) is provided for detecting the in-phase component of the input lines so as to control the pull-down circuit. Therefore, the fluctuation of the reference potential follows the fluctuation of the in-phase component of the input lines so that a stable and high-speed sensing operation is effected. |
