发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To obtain the minute-sized patterns by laminating resist composition whose fusion speed can be controlled by concentration of dopant and temperature of heat treatment. CONSTITUTION:After the spin coating of a substrate with non-doped phi-MAC, the substrate is subjected to a heat treatment, i.e., prebaking at 200 deg.C. A coating solvent is a mixed solution of 50% of monochlorobenzene and 50% of dioxsane. Nextly, the sample is spin-coated with phi-MAC doped with 3wt% of zinc bromide followed by prebaking at 180 deg.C. A thickness of the upper coating film is 3,000Angstrom and a coating solvent is methyl isobutyl ketone. The sample is irradiated with electron beams of 30Kv of accelerated voltage in a line form of 0.3mum width. Nextly, the sample is immersed in a mixed solution of 30% of dioxsane and 70% of di-isobutyl ketone to be developed, thereby forming the pattern composed of a lower-layer resist pattern 4 and an upperlayer resist pattern 5, whose cross- section shows an undercut shape with a size of aperture of 0.4mum and a boundary size of 1mum.
申请公布号 JPS6155922(A) 申请公布日期 1986.03.20
申请号 JP19840176851 申请日期 1984.08.27
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 IWATATE KAZUMI;HARADA KATSUYUKI
分类号 H01L21/027;G03F7/00;G03F7/095;G03F7/26;G03F7/30;H01L21/30 主分类号 H01L21/027
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