| 摘要 |
There is disclosed a method of operating an electron beam array lithography apparatus employing an electron beam column having a lenslet array, a fine deflector assembly and a coarse deflector assembly for selectively directing an electron beam to a desired element of the lenslet array and its associated fine deflector element which directs the electron beam to a desired point on a target plane. The method comprises fabricating a lenslet stitching calibration grid having formed thereon a grid of fiducial marking elements, using the lenslet stitching calibration grid to derive fiducial marking signals indicative of the boundaries of the field of view of the individual elements of the lenslet array, and using the fiducial marking signals to control the electron beam column so as to stitch together the individual fields of view of the elements in the lenslet array in order to cover a desired area of a target workpiece to be exposed to the electron beam and which is greater in surface area than the area covered by the field of view of an individual element of the lenslet array. |
