| 摘要 |
PURPOSE:To form a film of the resultant product of decomposition on a substrate surface at a practically high speed by forming a discharge gas such as rare gas to injection plasma, radiating UV rays thereon to irradiate the same on the photochemically reactive gas near the substrate to photodecompose said gas. CONSTITUTION:The discharge gas G1 for radiation of UV rays consisting of the rare gas, hydrogen, heavy hydrogen or the gaseous mixture composed thereof is formed to the injection plasma P by an electrode 2 for plasma jet to radiate about<= 160nm UV rays in a discharge region 4 in a vessel 1 provided with a window 3 consisting of LiF. On the other hand, the substrate 7 imposed on a susceptor 6 is disposed at the center in a reactive vessel having a window 8 consisting of LiF facing the above-mentioned window 3 and the above-mentioned UV rays are irradiated through the windows 3, 8 so as to be passed through the photochemically reactive gas G2 contg. a hydrogen compd. such as Si and Ge, halogen compd., etc., by which said gas is photodecomposed near the substrate 7 in a reaction region 9. The resultant product of the decomposition is deposited on the substrate 7, by which the film of a-Si, etc. is quickly formed on the surface thereof. |
