| 摘要 |
PURPOSE:To reduce resistance between a gate and a source while increasing gate and drain withstanding voltage by forming one part of a source electrode only by an AuGe/Ni alloy layer and shaping one part of a drain electrode only by an n<+> layer. CONSTITUTION:A source electrode 25, a gate electrode 24 and a drain electrode 26 are formed onto an n type GaAs active layer 12 shaped onto a semi-insulating GaAs substrate 11. In a GaAsMES type FET having such constitution, one part 27 on the gate electrode 24 side of the source electrode 25 is constituted by an AuGe/Ni alloy layer 22 as an ohmic metallic layer, and one part 28 on the gate electrode 24 side of the drain electrode 26 is constituted by an n<+> layer 14 in which a high concentration impurity is doped to the active layer 12. According to such constitution, resistance between a gate and a source is reduced while withstanding voltage between the gate and a drain can be increased. |
