发明名称 ELECTRODE WIRING STRUCTURE OF COMPOSITE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a connecting section having satisfactory performance beteen a semiconductor element and another functional element by forming an extracting electrode for the semiconductor element and the terminal section of another functional element connected to the extracting electrode in width wider than other wiring sections. CONSTITUTION:A metallic film 8 is formed onto the surface of a semiconductor element 1 so as to extend over one parts of connecting pads 7. The noses of the pads 7 are shaped in width wider than others. Photosensitive resin patterns 9 are shaped onto the surface of the element 1, the pads 7 and regions for reed screen-shaped electrodes 4 to be formed. The metallic film 8 is shaped to a predetermined pattern through etching while using the patterns 9 formed in this manner as masks. Consequently, only sections coated with the patterns 9 are left in the film 8, thus forming the electrodes 4 as shown in the figure. Electrode connecting sections shaped through said method have width in the same extent as the pads 7, thus increasing junction areas among the electrodes 4 and the pads 7. Accordingly, junctions among the electrodes 4 having small contact resistance and wirings for the element 1 are obtained, thus improving the performance of a composite element.
申请公布号 JPS6149453(A) 申请公布日期 1986.03.11
申请号 JP19840172000 申请日期 1984.08.17
申请人 CLARION CO LTD 发明人 TAKISHIMA SHOJI
分类号 H01L25/00;H01L21/98;H01L23/52 主分类号 H01L25/00
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