| 摘要 |
PURPOSE:To perform a high speed switching with a low power light source by using as a photosensitive element of a sole gate SI thyristor a static induction phototransistor and the like. CONSTITUTION:The anode A32 of a sole gate SI thyristor 31 is biased through a load resistor 43 to VAK'44, and a gate G34 is connected with the drain of a phototrigger high speed and high sensitivity static induction phototransistor 34 and the source of a similar phototransistor 36 for quenching a light. The both transistors 35, 36 are biased by positive and negative voltages 37, 38. Thus, a trigger light pulse LT45 is emitted to the phototransistor 35 to turn ON the thyristor 31, a quenching light pulse LQ46 is emitted to the phototransistor 36 to turn OFF the thyristor 31. The phototransistors 35, 36 may use other static induction photothyristor and the like. |
