| 摘要 |
<p>Chemical vapour deposition process for depositing a transition metal nitride coating on a substrate. The coating has utility as a conductor in a microelectronic device. The transition metal source material for the process is a transition metal azide or aliphatic amine, optionally halogenated, which is a liquid at bubbler temperature. The compound is transported to a deposition chamber containing a substrate; in one embodiment transport is effected by a carrier gas comprising a mixture of hydrogen with hydrazine vapour or nitrogen. The deposition chamber containing the substrate is maintained under pyrolytic conditions to decompose the transition metal compound source material and to form a transition metal nitride on the substrate.</p> |
