SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To realize a transistor capable of being switched at high speed by forming a control electrode to an intermediate superlattice layer with a sub- band and utilizing the resonance tunnel phenomenon of superlattice structure. CONSTITUTION:A non-doped Al0.3Ga0.7As layer 32 is shaped thinly onto an n<+>- GaAs substrate 30. An n-GaAs layer 34 is formed thinly onto the layer 32. An ohmic electrode 36 is shaped to one part on the layer 34 while being coated with an insulating layer 38. On the other hand, a non-doped Al0.3Ga0.7As layer 40 is formed thinly to a section on the layer 34 not coated with the electrode 36 and the layer 38. An n<+>-GaAs layer 42 is shaped onto the layer 40. Ohmic electrodes 44, 46 are shaped onto the lower surface of the substrate 30 and the upper surface of the layer 42. Consequently, a transistor Tr in which the electrode 36 functions as a base electrode and the electrodes 44 and 46 serve as an emitter electrode and a collector electrode is formed. Currents in the Tr flow by utilizing a tunnel phenomenon through a sub-hand in a base.