发明名称 |
Process for electrochemical metallization of dielectrics |
摘要 |
PCT No. PCT/SU80/00063 Sec. 371 Date Feb. 18, 1981 Sec. 102(e) Date Feb. 18, 1981 PCT Filed Apr. 25, 1980 PCT Pub. No. WO80/02570 PCT Pub. Date Nov. 27, 1980.A solution for electrochemical metallization of dielectrics comprising a salt of copper, a phosphorus-containing salt, a stabilizing agent and water which contains, as the phosphorus-containing salt, a salt of hypophosphorous acid, the components being employed in the following proportions, g/l: copper salt: 35 to 350 hypophosphorous acid salt: 35 to 400 stabilizing agent: 0.004 to 250 water: up to 1 liter. A process for electrochemical metallization of dielectrics involving preparation of the dielectric surface, formation of a current-conducting layer thereon, electrochemical building-up of a metal coating, characterized in that the dielectric surface activation and formation of a current-conducting layer on this surface are effected simultaneously by wetting the dielectric surface with the above-specified solution, followed by a heat-treatment at a temperature within the range of from 80 DEG to 350 DEG C.
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申请公布号 |
US4576689(A) |
申请公布日期 |
1986.03.18 |
申请号 |
US19810243929 |
申请日期 |
1981.02.18 |
申请人 |
MAKKAEV, ALMAXUD M.;LOMOVSKY, OLEG I.;MIKHAILOV, JURY I.;BOLDYREV, VLADIMIR V. |
发明人 |
MAKKAEV, ALMAXUD M.;LOMOVSKY, OLEG I.;MIKHAILOV, JURY I.;BOLDYREV, VLADIMIR V. |
分类号 |
H05K3/10;C23C18/16;C23C18/40;C23C28/02;C25D5/54;C25D5/56;H01G4/008;H05K3/18;H05K3/42;(IPC1-7):C25D5/54;C23C18/14 |
主分类号 |
H05K3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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