| 发明名称 |
Incoherent light annealing of gallium arsenide substrate |
| 摘要 |
Ion implanted gallium arsenide substrates are annealed by providing an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.
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| 申请公布号 |
US4576652(A) |
申请公布日期 |
1986.03.18 |
| 申请号 |
US19840630057 |
申请日期 |
1984.07.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOVEL, HAROLD J.;KUECH, THOMAS F. |
| 分类号 |
H01L21/26;H01L21/265;H01L21/268;H01L21/324;(IPC1-7):H01L21/263 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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