| 摘要 |
PURPOSE:To improve performance characteristics through lowering the threshold voltage, increasing the ON current, decreasing the OFF current, and enhancing the drain withstand-voltage capability by a method wherein the film on a channel region located between a source region and drain region is made thinner locally. CONSTITUTION:An island of non-single crystal Si layer 9 is formed on an insulating substrate 1 and etching is accomplished to selectively affect only a channel region 3 through the intermediary of a resist film 8. A process follows wherein a gate insulating film 4 with a uniform thickness is formed on the entire surface, a gate electrode 5 is built, and impurity ions are driven into the Si layer 9 for the formation of source-drain regions 2. An interlayer insulating film 6 is formed, a contact hole is provided, and then an electrode 7 is built of aluminum or the like. |
