| 摘要 |
PURPOSE:To obtain an adhesion type image sensor at low cost by constituting a Schottky barrier layer formed on the interface between an organic semiconductor and a metallic-plate electrode as a photoelectric conversion section. CONSTITUTION:A Schottky barrier layer is shaped on the interface between an organic semicondutor 2 formed to a base body 1 and a transparent surface metallic electrode 3. The semiconductor 2 and an electrode 4 are brought into ohmic-contact. In an adhesion type image sensor constituted in this manner, beams from a light source reflected from a reading picture surface in a draft are absorbed to the Schottky barrier layer through the electrode 3. Consequently, electromotive force is generated by a photovoltaic effect. According to the constitution, a photoelectric conversion section is constituted by using the organic semiconductor, thus preparing the image sensor, cost thereof is low and has a large area. |
