发明名称 THIN FILM FORMING METHOD
摘要 PURPOSE:To prevent the intrusion of a flow of vapor into the gap between a mask and a substrate by a method wherein a mask of the prescribed shape is provided on the substrate, and when a thin film pattern is formed on the exposed part of the substrate using the flow of vapor emitted from the source of evaporation, a mask is constituted by the plate materials having different thermal expansion coefficient, and the plate material having larger thermal expansion coefficient is contacted to the substrate. CONSTITUTION:A mask of the prescribed shape is provided on a substrate 5, they are surrounded by a supporting frame 9, and they are fixed using a pawl 10 provided on the supporting frame 9. Then, a thin film pattern is applied on the surface of the substrate 5 which is not covered by a mask by running the stream of an evaporated substance. At this time, the mask is constituted by two kinds of sticked-together plate materials having different thermal expansion coefficient, not using one-layer single unit. The plate material 14a having larger thermal expansion coefficient is contacted to the substrate 5, and the plate material 14b having small thermal expansion coefficient is not contacted to the substrate. As a result, the mask is not deformed by the heat generated while it is being adhered, and the thin film of desired accuracy can be obtained.
申请公布号 JPS6154615(A) 申请公布日期 1986.03.18
申请号 JP19840176009 申请日期 1984.08.24
申请人 FUJITSU LTD 发明人 TANAKA MASAO;MASUDA SHIGERU;TAKOJIMA TAKENAO
分类号 H01L21/285;H01L21/203;H01L21/31 主分类号 H01L21/285
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