| 摘要 |
A double heterojunction lead salt diode infrared laser having an active region of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region is sandwiched between two lead salt semiconductor layers containing ytterbium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active layer. In addition, the ytterbium-containing lead salt layers have an energy band gap greater than the active layer and an index of refraction less than the active layer. Hence, the laser has lattice matching, as well as enhanced, carrier confinement and optical confinement.
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