| 摘要 |
PURPOSE:To make film thickness even due to gas turbulence by a method wherein, when a work is arranged in a reaction chamber and reaction gas is fed thereto to deposit thin film on the work, the reaction gas is jetted from a nozzle opposite to the work while any used gas is exhausted from exhaust holes provided on the nozzle side. CONSTITUTION:A heater 3 with multiple heating wires 3a buried therein is fixed to the ceiling of reaction chamber 1 and then a work 2 whereon thin film is to be deposited is bonded to the bottom of heater 3. Besides, a nozzle 4 with multiple holes 4a at specified interval is arranged on the work 2 side while the nozzle 4 is connected to a gas feeding hole 5 externally protruded to be further connected to a mass flow controller 7. Through these procedures, specified quantity of gas is jetted from the multiple holes 4a to form thin film on the surface of work 2 while any used gas is exhausted from exhausted holes 6. At this time, the exhaust holes 6 are opened on the bottom of nozzle 4 side encircling the nozzle 4 so that turbulence may be produced between the holes 4a and the work 2 to make the thin film thickness even if the diameter of work 2 is larger. |
