发明名称 Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge
摘要 A method and apparatus are disclosed for exposing photoresist using an incident electron beam during the fabrication of a semiconductor device. The method includes the steps of coating the substrate with a photoresist that is exposed in response to an electron beam. An electron beam is projected onto the photoresist and deflected to trace a pattern. The voltage and the amount of charge of the electron beam are controlled as it is deflected so that the energy incident upon the coated photoresist is correlated to variations in the photoresist thickness to expose the photoresist with minimal penetration therethrough to underlying structures.
申请公布号 US4576884(A) 申请公布日期 1986.03.18
申请号 US19840620510 申请日期 1984.06.14
申请人 MICROELECTRONICS CENTER OF NORTH CAROLINA 发明人 REISMAN, ARNOLD
分类号 G03C5/08;G03F7/20;H01J37/317;H01L21/027;(IPC1-7):G03C5/00;G21K5/04 主分类号 G03C5/08
代理机构 代理人
主权项
地址