| 摘要 |
PURPOSE:To obtain excellent senstivity to beams extending over a wide wave range by separating and constituting a photodiode section for receving beams and a transistor section for oscillation. CONSTITUTION:A p layer 2 in a photodiode section 14 and a p layer 15 in a composite transistor Tr section 15 are short-circuited from the outside. When beams L are projected to the layer 2 as a light-receiving section, charges are stored in the layer 2. When charges are stored in the layer 2, the potential of the layer 2 rises. When the potential exceeds threshold voltage, pulse currents instantaneously flow through an n<+> layer 8 from the layer 5. When charges in the layer 2 disapperar, voltage reaches zero, and currents are stopped. Charges generated by beams L again are stored in the layer 2. The process is repeated, and a photosensitive oscillating element 11 oscillates pulses. The intervals of the pulses change by the amount of light received when threshold voltage is kept constant. Accordingly, the degree of freedom of the design of the structure of the diode section 14 is improved, thus widening the wave range of beams in which an element sensitizes. |
