PHOTOANODES MADE FROM PHOTORESPONSIVE AMORPHOUS SEMICONDUCTOR MATERIALS

摘要

A photoresponsive amorphous semiconductor material is modified by incorporating at least one compensating agent selected from 3 group consisting of hydrogen, lithium, fluorine, beryllium, aluminum, boron, magnesium, other Group I elements, and compounds of these elements. The semiconductor material is cathodically treated either simultaneously with or subsequent to this modification. The semiconductor material may be additionally modified by incorporating a second modifying agent selected from a group consisting of silicon, the transition elements, the lanthanides, and compounds of these elements. The semiconductor material also may be subjected to heat treatment in an inert atmosphere before the cathodic treatment. A photoanode utilizing the above described semiconductor material further includes a substrate to support a film of said material. The photoanode may additionally include a second semiconductor film having a small band gap inserted between said substrate and said first semiconductor film. These photoanodes may be used in an electrochemical cell for the conversion of light into electrical energy or energy stored in a fuel.