发明名称 Apparatus for electron beam lithography
摘要 An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
申请公布号 US4577111(A) 申请公布日期 1986.03.18
申请号 US19830516091 申请日期 1983.07.22
申请人 HITACHI, LTD. 发明人 SAITOU, NORIO;OZASA, SUSUMU;MATSUZAKA, TAKASHI
分类号 G03F7/20;H01J37/30;H01J37/317;H01L21/027;H01L21/30;(IPC1-7):H01J37/26 主分类号 G03F7/20
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