Low temperature growth of silicon dioxide on silicon

摘要

A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm2 and preferably about 6 Watts/cm2. By maintaining the substrate temperature below about 300 DEG C., and preferably at about 130 DEG C., it has been found that a high quality silicon dioxide film up to about 1000 ANGSTROM in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.