| 摘要 |
PURPOSE:To produce a photovoltaic element prevented from the contamination by undesired impurities, by providing conveying means in each of a plurality of plasma reaction chambers so that a substrate only is moved between the plasma reaction chambers. CONSTITUTION:A P type layer reaction chamber 11 and an I-type layer reaction chamber 12 are respectively provided with lower electrodes 15 and 16 opposed to upper electrodes not shown. By applying high-frequency field between the upper and lowe electrodes, amorphous Si is deposited on a substrate. In the reaction chamber 11, a mixture gas of monosilane and diborane is glow discharge decomposed of deposit a P type layer on the substrate 10, and then the chamber is evacuated sufficiently to open an opening 14. The substrate 10 thus treated is fed through the opening 14 into the reaction chamber 12 by rotatably driving rollers provided in the electrode 15, and rollers and a roller conveyor 17 provided close to a partition wall 13. At the same time, a roller conveyor 18 close to the wall of the reaction chamber 12 and rollers of the electrode 16 are rotatably driven to dispose the substrate 1 on the electrode 16 and the opening 14 is closed. |
