| 摘要 |
PURPOSE:To prevent Sb2O3 from evaporating and to promote diffusion of Sb to a semiconductor substrate by covering an Sb2O3 layer with a protecting film in a thermal diffusion treatment of manufacturing of a semiconductor device. CONSTITUTION:After an oxide film 2 is formed on a semiconductor substrate 1 with the thermal oxidation method, a resist 3 is coated on the film 2 and the film 2 and the resist 3 are selectively etched, a scheduled pattern with openigs 4 and 5 is formed on the film 2. After Sb2O3 dessolved in organic solvent is coated on the film 2 and on the substrate 1 opened at the openigs 4 and 5 directly, an Sb2O3 layer 6 is formed through volatilizing the solvent. A protecting film 7 passing no oxygen is formed on this layer 6 with the chemical vapor phase growing method. After this substrate 1 is put into a furnace, given the thermal treatment in a predetermined temperature for a scheduled time and Sb is introduced into the substrate 1 from the layer 6 in contact with the substrate 1 in the openings 4 and 5, embedded collector layers 8 and 9 being Sb impurity introducing regions are formed in a predetermined concentration. |
