| 摘要 |
PURPOSE:To prevent impurity adhered to a tray from being exposed by plasma and to improve an upgrading of products by covering the lower face of the tray supporting a substrate of a film forming chamber in a thin film manufacturing device with a cover tray. CONSTITUTION:After a film forming chamber 21 for forming i-layer is arranged in the center of a thin film manufacturing devide, a proceeded substrate 24 supported on a tray 23 is removed from a film forming chamber 20 for forming p- layer to this film for mingchamber 21. After the lower face of this tray 23 is covered with a cover tray 25, a reaction gas supplied by an RF electrode 26 provided in the lower portion of the film forming chamber 21 is plasmolyzed through a glow discharging and the substrate 24 is heated by a substrate heating method 27 of the upper portion, an i-layer is formed with the plasma CVD method. After a space between this tray 23 and the tray cover 25 is set in the range of 1-10mm., the tray cover 25 prevents impurity adhered to the tray 23 from being exposed and upgrading of products such as solar cells is improved. |
