| 摘要 |
<p>PURPOSE:To manufacture an integrated circuit which has small chip size and does not result in damage at the time of disconnecting by extending a grounding conductor of monolithic integrated circuit to the rear side of the substrate through a via-hole formed at the side surface of semi-insulated GaAs substrate. CONSTITUTION:A semi-insulated GaAs substrate 1 on which a monolithic circuit 2 is formed is attached, for example, to a glass 4 with a bonding material 3. A via-hole 5 is formed to an area of substrate 1 of the circuit 2 where grounding is necessary by boring a through hole with the etching, etc. In this case, particularly at the grounding position corresponding to the chip cutting position 7, a common one hole 5 is bored bridging the position 7. Thereafter, for example, gold 6 is plated on the entire part of rear surface of substrate 1 where a hole 5 is formed. Next, the substrate is cut at the position 7 in such a way as dividing the hole 5 formed previously into two portions, each of which is individual microwave monolithic integrated circuit.</p> |
