发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To realize the stable operation, by connecting in parallel two gate turn-off thyristors in each of which two gate terminals are connected to a package separately from a gate electrode. CONSTITUTION:Anode terminals 9A and 9B are connected to each other with an external lead 101, and main current flows between a cooling fin and the lead 101. Gate terminals 10aA and 10aB are connected to each other with an external lead 102, while gate terminals 10bA and 10bB are connected to each other with an external lead 103. When the gate is turned OFF and a gate signal is applied to the leads 101 and 102, a potential difference is produced between gate electrodes 8A and 8B. Since the lead 103 is disposed between the gate terminals 10bA and 10bB, electric current flows therethrough to nullify the potential difference between the electrodes 8A and 8B. The unbalance in the main current between the gate turn-off thyristors is alleviated in this manner.</p>
申请公布号 JPS6153772(A) 申请公布日期 1986.03.17
申请号 JP19840175032 申请日期 1984.08.24
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 SUGAYAMA SHIGERU;TOMITA SHIGEO;KOGA KENJI
分类号 H01L29/74;H01L25/11 主分类号 H01L29/74
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