| 摘要 |
PURPOSE:To produce a bipolar transistor having a decreased base resistance, by forming the base outlet of a metal. CONSTITUTION:The surface of a substrate 1 is oxidized to form an insulator layer 6 consisting of Si dioxide. Subsequently, a refractory metal layer 7 of tungsten, molybdenum or the like and an insulator layer 8 consisting of Si dioxide are formed. An aperture 9 is then formed so as to rach an n type region 3 having a low concentrion of impurity, and the aperture 9 is filled with a p type Si single-crystal layer 10 having a predetermined concentration of impurity. Ions of an n type impurity are implanted into the crystal 10 to a high concentration so that an n type region 11 is formed. Subsequently, an emitter electrode 12, a base electrode 13 and a collector electrode 14 are formed. The base outlet thereof is provided on the side wall of the base region so as to form a bipolar transistor TR having a vertical construction. Thus, the parasitic electrostatic capacity between the collector and the base is decrased. Further, the base outlet is formed of a metal so as to lower the base resistance. |
