| 摘要 |
PURPOSE:To obtain the titled device performing very high-speed action by a method wherein a conductive channel is formed in the interface of a semiconductor of low conductivity and made as a negative load, and the conductivity of the interface of the remaining semiconductor of low conductivity is controlled by the gae electrode, thus making a semiconductor of high conductivity as a connection layer. CONSTITUTION:GaAs layers 15, 16, 17, and 25 of I-type, N type, I-type, and N type are formed on an N<+>-GaAs substrate 14. A groove is carved in this wafer by selective etching, thus forming a Ga0.6Al0.4As nondoped layer 26; next, an N<+>-GaAs layer 27 is formed thereon. This plateau is almost removed first by etching and next formed into a layer 28 with a selective etchant by using the layer 26 as a mask. A donar layer is formed on the wafer surface by Si ion implantation, and the layers 25 and 28 are selectively etched. Thereafter, alloy layers at positions of ohmic electrodes 21 and 22 are allowed to reach the GaAs layer 16 or 18 by penetration through the GaAs layer 17 or the Ga0.6Al0.4As layer 19. |
