| 摘要 |
PURPOSE:To make the wiring construction of a contact hole perfect by making an aluminum wiring after removing a silicon oxide film removing a metal silicide in the region other than the contact hole by etching forming the silicon oxide film by selective oxidation after the metal silicide is coated on the contact hole on a substrate. CONSTITUTION:The surface of a silicon substrate 10 is coated with, e.g., titanium silicide 14. The silicide 14 is perfectly filled in a contact hole 13. Then, silicon oxide 15 is formed by heating and oxidation since the bottom surface of the titanium silicide filled in the contact hole is a foundation of silicon and titanium oxide 16 is formed on the surface of the PSG, an insulating material, since no silicon exists. Then, the titanium oxide 16 is removed, the titanium silicide in the contact hole is covered and sealed using the silicon oxide 15 as a mask and the titanium silicide 14 is removed by etching. Then, the silicon oxide 15 is removed and an aluminum wiring 17 is formed on the surface of a pattern which became a plane state. |
