| 摘要 |
PURPOSE:To obtain gate electrode wiring films of high quality excellent in corrosion resistance to hydrofluoric acid, etc. having low electric resistance, by a method wherein a nitride film of high melting point metal is formed on the surfade of a high melting point metal silicide film. CONSTITUTION:A silicide film 6 of Ti or Ta is formed on a polycrystalline Si film 5, and a relatively thinner nitride film 12 of Ti or Ta is formed by sputtering with a nitride target of Ti or Ta. Successively, the nitride film 12, silicide film 6, and Si film 5 are patterned by photoengraving and etching in this order from above, and source-drain impurity layers 7a and 7b are formed by impurity ion implantation; then, heat treatment is applied to them. The nitride film 12 of Ti and Ta is much excellent in corrosion resistance to the solution of hydrofluoric acid, stable under a 5min etching treatment to the dilution of hydrofluoric acid, and much excellent in protecting characteristic from Ti silicide films. |
