| 摘要 |
PURPOSE:To obtain a semiconductor device, dielectric strength thereof does not lower, by forming a thick film section to one part of an silicon oxide film and shaping a polysilicon layer onto the thick film section. CONSTITUTION:A thick film section is formed to one part of an silicon oxide film 2 to constitute a surface projecting section 5, and a polysilicon layer 3 in approximately the same size as the projecting section 5 is shaped onto the projecting section 5. The surface projecting section 5 is formed through a photoengraving technique. Stress is generated in a contacting section 4 between the polysilicon layer 3 and the surface projecting section 5 of the silicon oxide film 2 in the same manner as conventional devices, but large stress as seen in conventional devices is not generated because the silicon oxide film 2 in the contacting section takes a projecting shape, and defects and cracks do not reach the main body section of the silicon oxide film 2 even when they are generated in the surface projecting section 5 by stress. Consequently, dielectric strength between the polysilicon layer 3 and a semiconductor base body 1 does not lower. The lowering of dielectric strength due to stress is at issue in a bonding pad section for connecting electrodes or a high-voltage applying section, and the polysilicon layer 3 need not be formed in approximately the same size as the surface projecting section 5 in other sections. |
