| 摘要 |
PURPOSE:To facilitate the realization of dynamic RAMs of large capacitance by obtaining the formation and structure of new information accumulated parts, by a method wherein a dielectric thin film is formed on the side surface of a groove, and a semiconductor thin film is deposited in the form of its cover, thus making this thin film as the source-drain regions of the transistor of the cell part. CONSTITUTION:The groove 103 is formed in the surface of an Si substrate 101, and is coated with a thin dielectric film 104 after removal of the mask member. After the first Si thin film 105 containing an N type effective impurity is deposited, the Si thin film other than that buried in the groove 103 is entirely removed. The second P type Si thin film 106 is deposited, and an N type Si thin film 107 is formed by selectively introducing an N type effective impurity. An interlayer insulation film 108 is formed of an insulation film such as Si oxide film of the surface. Next, the gate film 109 of a MIS transistor is formed by thermal oxidation of the surface of the Si thin film 106, resulting in the formation of a gate electrode 110. Successively, an N<+> region 112 serving as the source-drain regions of the transistor is produced by forming an interlayer film 111 and a contact hole is opened. |
