AMORPHOUS SILICON ELEMENT

摘要

PURPOSE:To improve the quality and reliability by leaking static electricity by a method wherein an amorphous Si film sliding out of the opposite electrode is partly treated by resistance reduction. CONSTITUTION:A part 5 treated by resistance reduction is reduce in resistance to a size of about 100mum diameter on heat-fusion by irradiating the amorphous Si film 3 with laser beams. This manner makes resistance value between the upper electrode 4 and the lower one 2 with the interposal of said part 5 much smallr than the resistance value 500KOMEGA-500MOMEGA of the Si film 3 and can protect solar cells by leaking voltages about 5,000V-50kV generated by static electricity.