| 摘要 |
PURPOSE:To prevent a reaching to an aluminum wiring and a smooth coating film due to the punch-through of a passivation film of the acute angle section of a filler on a resin seal by forming a protective film onto the passivation film through a plasma CVD method. CONSTITUTION:Aluminum wirings 4 are shaped onto a smooth coating film 10 on the surface of a semiconductor element 1, and a protective film 11 consisting of an silicon oxide film or a polycrystalline silicon film is formed onto a passivation film 7 through a plasma CVD method. Even when the acute angle sections of filler 9 in a resin composition composed of an epoxy resin 8 and fillers 9 pierce through the protective film 11 by pressure on a resin seal, the situation in which the acute angle sections of fillers 9 punch through the protective film 11 and the passivation film 7 and reach up to the aluminum wirings 4 or the smooth coating film 10 can be avoided. |
