| 摘要 |
PURPOSE:To contrive simplification of total processes and improvement of yield by simultaneously forming an impurity region which has two or more conductivities on one main surface of a semiconductor substrate with one ion implantation process through a resist pattern. CONSTITUTION:One main surface of a semiconductor substrate A is covered with the first insulation film 1, a desired resist pattern 3 is formed thinner than usual, ions are implanted on all the surface and an impurity region 5 which has a different conductivity from a conventional impurity region 4 is formed directly under the resist pattern 3. The control of the conductivity of the impurity region 5 can also be made by increasing the thickness of the desired resist pattern 3' and the impurity region 5 is made a new impurity region 5'. If the first insulation film 1 is removed by a etching technique before the ion implantation process with the desired resist pattern 3 and then ions are implanted, a region which has equal conductivity to the impurity region 5 and a new impurity region 4' which has a different conductivity are formed. Thus, by controlling the thickness of a resist film for forming a desired pattern, a number of impurity regions which have a desired conductivity can be formed. |
