| 摘要 |
PURPOSE:To enable removing a stain adhered to an iris speedily and uniformly at a high temperature by constituting the iris which has a required hole with an Si single crystal substrate, a thin SiO2 film formed on the surface of the substrate by thermal oxidation and a conductive heating unit of Ni, Pt, etc. coated on the surface of the SiO2 film. CONSTITUTION:Approx. 1mum thick SiO2 film 28 is formed on the surface of an N-Si chip 26 for the substrate of an iris by thermal oxidation. The rectangular hole 21 of the iris is formed by etching the N-Si chip 26 and the SiO2 film 28. The N-Si chip 26 is further etched with an anisotropic etchant, is made a larger hole than the rectangular hole 21 and the end surface of the hole is inclined. A conductive heating unit 27 of Ni, Pt, etc. is sputtered to the thickness of several thousand Angstrom on the surface of the SiO2 film 28. The conductive heating unit 27 is connected to a heating power source 22, a current is supplied to the conductive heating unit 27 from the power source 22, the heating unit 27 generates heat by the current and the rectangular hole 21 is heated at a high temperature. |
