| 摘要 |
PURPOSE:To obtain the titled device of high withstand voltage and small leakage current by providing a semiconductor substrate of the first conductivity type, an impurity region of the second conductivity type, the first insulation film, a semi-insulation film, the second insulation film, and electrodes formed as ohmic contacts with the impurity region and the semi-insulation film. CONSTITUTION:An electrode wiring layer 4' of aluminum in ohmic contact with a P<+> type region 2 is formed via contact hole, and this layer 4' is brought into ohmic contact also with the semi-insulation film 6 via contact hole. Here, a terminal oxide film 3 is interposed on the neighborhood of the junction boundary of the P<+> type impurity region 2, and so the semi-insulation film 6 does not directly cover the surface of the Si substrate 1: therefore, current leakage is prevented. On the other hand, leakage current flowing from the electrode 4' to the N type region of the substrate 1 directly via semi-insulation film 6 is possible from the viewpoint that the film 6 is connected to the electrode 4'; however, the leakage current through this route can be almost neglected because of marked inhibition due to the high resistance of the semi-insulation film 6. |
