Semiconductor layer having a laminar structure, and process for producing it

摘要

The object of the invention is to be able, in a process for producing thin layers of silicon with a laminar structure on a substrate, to be able to adjust the strength of an optical birefringence effect of the silicon layer and to predefine the longitudinal orientation of the laminar structure with respect to the substrate. To achieve this object it is proposed that an amorphous or microcrystalline silicon layer be vapour-deposited in a high vacuum onto a substrate surface in such a way that the vapour deposition direction forms an angle with the substrate surface normal, the size of which angle is between 10 DEG and 80 DEG , and it is proposed that the strength of an optical birefringence effect of the silicon layer is predefined by the choice of the angle, and that a longitudinal orientation, predefined with respect to the substrate, of the laminae is set by means of an alignment of the substrate with respect to the vapour deposition direction, in such a way that the longitudinal orientation is perpendicular to a plane spanned by the legs of the angle.