| 摘要 |
PURPOSE:To obtain the photoelectric conversion element of high photoelectric conversion efficiency which does not cause a decline of a short-circuit current or a curve factor even under the high-speed film forming condition by varying the deposition velocity continuously so as to become low in the region of the initial stage of formation of a light-active layer and to become high in the rest at a time of fabricating the light-active layer only by disilane. CONSTITUTION:In a plasma CVD device, a P-layer is formed to be about 100Angstrom thick with B2H6/Si2H6=0.1vol%, Si2H6/H2=50vol%, under 0.1Torr of pressure, 8.2KJ/g-Si2H6 of supplied energy, and temperature of 200 deg.C. Nextly, the substrate is transferred into a light-active layer forming chamber, where with the temperature of 300 deg.C, the forming pressure of 0.08- 0.3Torr and the supplied energy of 60KJ/g-Si2H6, a slight-active layer is formed. For the formation of the light-active layer, the substrate is transferred to a boundary forming part having a deposition velocity of 2Angstrom /S and after residence of 50sec, in order to make the deposition velocity 30Angstrom /S, RF electric power and a flow are changed, resulting in a film thickness of 5,000Angstrom . Subsequently, the substrate is transferred into N-layer forming chamber where an N-layer is formed to be about 300Angstrom with PH3/Si2H6=1vol%, S2H6/H2=10vol%. The substrate is taken out through a substrate take-out chamber and Al electrodes are formed by vacuum deposition, and thus the photoelectric conversion element of high photoelectric conversion efficiency can be obtained. |
