| 摘要 |
PURPOSE:To obtain a high-density and large-scaled magnetic memory element by integrating and forming unitedly a decoder constituted of a semiconductor element and a memory cell group composed of an amplifier and a core memory on a nonmagnetic substrate. CONSTITUTION:The titled magnetic memory element is constituted of an X address decoder 2, Y address decoder 3, write amplifier 5 and a memory cell group 6 on a nonmagnetic substrate 1, while six memory cells are composed of a core 10 formed by an X address line 7, Y address line 8, sense line 9 and strong body pattern. When a semiconductor substrate is used as the nonmagnetic substrate 1, a decoder, electric field effect transistor, bypolar transistor and varistic element can be directly formed on the substrate, which is very advantageous. In addition to C, Si and Ge, compounds of GaAs, etc., can be used as a semiconductor substrate. Thus, a high-density and large-scaled magnetic memory element having such functions as a high speed read and write of 1/100 micro sec and non volatile memory can be manufactured at a low cost. |
