| 摘要 |
PURPOSE:To offer the semiconductor device of uniform quality which is excellent in the high-frequency characteristics by obtaining an insulating film of uniform thickness by arranging the insulating film of the structure in which multiple layers of high molecular resin are formed with interposing an insulating silicon compound. CONSTITUTION:On the semiconductor substrate 1 consisting of GaAs on which an n type impurity layer 2, an n<++> impurity layer 3, a Schottky electrode 4, an ohmic electrode 5 are formed, a solution of polyimide resin is spin-coated followed by a heat treatment to form the first polyimide resin film 7 of 1.5mum thick. Nextly the first SiO2 film 8 of 5,000Angstrom is produced by CVD. Subsequently, the first SiO2 film 8 is spin-coated with the polyimide resin solution followed by a heat treatment to form the second polyimide resin film 9 of 2.2mum thick. Furthermore, the same process is repeated to form and to laminate the second SiO2 film 10 of 5,000Angstrom and the third polyimide resin film 11 of 2.3mum thick. At the formation of such insulating film 6, as said second and third polyimide resin films 9 and 11 are spread on the first and second SiO2 films 8 and 10 uniformly, the accuracy in film thickness of the whole insulating film 6 becomes high. |
